Breakdown Voltage of High-voltage GaN FETs
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چکیده
GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high enough and stable. Most studies so far measure the breakdown voltage by driving the device to destruction, which does not allow a comprehensive study of the physics of breakdown. Our goal is to develop a benign off-state breakdown (BV ) measurement scheme so that reproducible, non-destructive breakdown measurements can be obtained. These measurements will allow us to understand the physics of breakdown and suggest approaches towards the engineering of breakdown voltage of GaN FETs. Authors: A. Guo, J. A. del Alamo Sponsorship: MIT-MTL GaN Energy Initiative, NDSEG Fellowship Category: Electronic Devices, Materials Tags: alex guo, jesus del alamo Print This Page Download as PDF
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